Electro-optic device with semiconductor junction area and related methods
US11269140B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 9, 2018 |
| Grant date | Mar 8, 2022 |
| Priority date | — |
| Expiry date | Nov 28, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/302
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electro-optic device may include a photonic chip having an optical grating coupler at a surface. The optical grating coupler may include a first semiconductor layer having a first base and first fingers extending outwardly from the first base. The optical grating coupler may include a second semiconductor layer having a second base and second fingers extending outwardly from the second base and being interdigitated with the first fingers to define semiconductor junction areas, with the first and second fingers having a non-uniform width. The electro-optic device may include a circuit coupled to the optical grating coupler and configured to bias the semiconductor junction areas and change one or more optical characteristics of the optical grating coupler.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.