Multi-layer p-n junction based phase shifter and methods of manufacturing and using the same
US11269201B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2019 |
| Grant date | Mar 8, 2022 |
| Priority date | — |
| Expiry date | Aug 28, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/063
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical phase shifter and a method of making the same are disclosed. The phase shifter includes a substrate, a p-doped electrode and an n-doped electrode on the substrate, a first doped semiconductor layer on the p-doped electrode or the n-doped electrode and in electrical contact with the other electrode, a second doped semiconductor layer on the first doped semiconductor layer, a first vertical region electrically connecting the second doped semiconductor layer with the one electrode, and a cladding layer on or over the second semiconductor layer, the first vertical region, and at least a first sidewall of each of the first and second semiconductor layers. The p-doped electrode and the n-doped electrode form a p-n junction at an interface therebetween. The first and second doped semiconductor layers have the same doping type as the other electrode and the one electrode, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.