Semiconductor device and method of manufacturing the same
US11270971B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2019 |
| Grant date | Mar 8, 2022 |
| Priority date | — |
| Expiry date | Nov 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device capable of suppressing propagation of a crack caused by a temperature cycle at a bonding part between a bonding pad and a bonding wire is provided. A semiconductor device according to an embodiment includes a semiconductor chip having bonding pads and bonding wires. The bonding pad includes a barrier layer and a bonding layer formed on the barrier layer and formed of a material containing aluminum. The bonding wire is bonded to the bonding pad and formed of a material containing copper. An intermetallic compound layer formed of an intermetallic compound containing copper and aluminum is formed so as to reach the barrier layer from the bonding wire in at least a part of the bonding part between the bonding pad and the bonding wire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.