Photosensitive device, thin film transistor array substrate, and display panel
US11271014B2 · kind B2 · utility
Inventors
Key dates
| Filing date | May 14, 2019 |
| Grant date | Mar 8, 2022 |
| Priority date | — |
| Expiry date | Nov 30, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/471
Abstract
A photosensitive device comprising a first oxide thin film transistor and a second oxide thin film transistor. Wherein, a drain of the first oxide thin film transistor is electrically connected to a gate of the second oxide thin film transistor. The photosensitive device according to the present application adopts oxide thin film transistors arranged in a plurality of layers, which greatly improves the response amplitude to ambient light and breaks through the limitations of the single thin film transistor's low light response which makes it impossible to be used as a visible light detecting component. Therefore, the photosensitive device according to the present application can realize detection of ambient light and can expand the scope in which it can be applied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.