Quantum waveguide infrared photodetector
US11271023B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 2, 2020 |
| Grant date | Mar 8, 2022 |
| Priority date | — |
| Expiry date | Jul 31, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/959
Abstract
A quantum waveguide infrared photodetector includes: a photon absorption layer that receives infrared photons propagating longitudinally along a longitudinal length of the photon absorption layer, converts the infrared photons into electrons, and communicates the electrons to a conductor layer; a first conductor layer that receives a first electrical potential; and a second conductor layer that receives a second electrical potential, wherein electrons produced by the photon absorption layer are communicated from the photon absorption layer: to the first conductor layer when the first electrical potential is more positive than the second electrical potential, and to the second conductor layer when the second electrical potential is more positive than the first electrical potential, an electrical current produced by the electrons is proportional to an amount of absorption of the infrared photons in the photon absorption layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.