Germanium on insulator for CMOS imagers in the short wave infrared

US11271028B2 · kind B2 · utility

Assignee

• TriEye Ltd. · IL

Inventors

• Uriel Levy · Kiryat Ono, IL
• Omer Kapach · Jerusalem, IL
• Avraham Bakal · Nes Ziona, IL
• Assaf Lahav · Or Akiva, IL
• Edward Preisler · San Clemente, US

Key dates

• Filing date: Feb 11, 2019
• Grant date: Mar 8, 2022
• Expiry date: Feb 11, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/337

Abstract

Light detecting structures comprising germanium (Ge) photodiodes formed in a device layer of a germanium on-insulator (GeOI) wafer, focal planes arrays based on such Ge photodiodes (PDs) and methods for fabricating such Ge photodiodes and focal plane arrays (FPAs). An FPA includes a Ge-on-GeOI PD array bonded to a ROIC where the handle layer of the GeOI layer is removed. The GeOI insulator properties and thickness can be designed to improve light coupling into the PDs.