Back-illuminated single-photon avalanche diode
US11271031B2 · kind B2 · utility
1Cited by
210References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 2020 |
| Grant date | Mar 8, 2022 |
| Priority date | — |
| Expiry date | May 18, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/959
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.