Spin-orbit-torque magnetoresistive memory cell with integrated selector elements and method of making the same
US11271035B2 · kind B2 · utility
6Cited by
6References
2Claims
0Family size
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Key dates
| Filing date | May 2, 2019 |
| Grant date | Mar 8, 2022 |
| Priority date | — |
| Expiry date | Jul 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) device includes a SOT MRAM cell containing a first two terminal selector element, a nonmagnetic metallic assist plate, and a magnetic tunnel junction located between the first two terminal selector element and the nonmagnetic metallic assist plate, and a circuit selection element selected from a transistor or a second two terminal selector element electrically connected to the nonmagnetic metallic assist plate of the SOT MRAM cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.