Semiconductor device and power converter
US11271084B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2018 |
| Grant date | Mar 8, 2022 |
| Priority date | — |
| Expiry date | Nov 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a semiconductor device having trench gates. The semiconductor device includes the following: a first semiconductor layer; a first semiconductor region selectively disposed in the upper layer of the first semiconductor layer; a second semiconductor region in contact with the first semiconductor region; a third semiconductor region on the bottom surfaces of the first and second semiconductor regions; gate trenches provided to penetrate the first and third semiconductor regions in the thickness direction of the first and third semiconductor regions to reach the inside of the first semiconductor layer; a field-reducing region on the bottom of each gate trench; and connection layers arranged in the first semiconductor layer at intervals so as to be each in contact with at least one of sidewalls of the gate trenches, the connection layers each electrically connecting the field-reducing region to the third semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.