Short wavelength infrared optoelectronic devices having a dilute nitride layer

US11271122B2 · kind B2 · utility

Assignee

• ARRAY PHOTONICS, INC. · US

Inventors

• Radek Roucka · Tempe, US
• Sabeur Siala · Sunnyvale, US
• Aymeric MAROS · San Francisco, US
• Ting Liu · Rongcheng District, CN
• Ferran Suarez · Chandler, US
• Evan Pickett · Tigard, US

Key dates

• Filing date: Mar 9, 2020
• Grant date: Mar 8, 2022
• Expiry date: Mar 26, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

Semiconductor optoelectronic devices having a dilute nitride active layer are disclosed. In particular, the semiconductor devices have a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV. Photodetectors comprising a dilute nitride active layer have a responsivity of greater than 0.6 A/W at a wavelength of 1.3 μm.