Multi-junction optoelectronic device with group IV semiconductor as a bottom junction

US11271133B2 · kind B2 · utility

Assignee

• Utica Leaseco, LLC · US

Inventors

• Brendan M. Kayes · Los Angeles, US
• Gang He · Magnolia Trace, CA

Key dates

• Filing date: Apr 19, 2018
• Grant date: Mar 8, 2022
• Expiry date: Apr 19, 2038

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

A multi-junction optoelectronic device and method of manufacture are disclosed. The method comprises providing a first p-n structure on a substrate, wherein the first p-n structure comprises a first base layer of a first semiconductor with a first bandgap such that a lattice constant of the first semiconductor matches a lattice constant of the substrate, and wherein the first semiconductor comprises a Group III-V semiconductor. The method includes providing a second p-n structure, wherein the second p-n structure comprises a second base layer of a second semiconductor with a second bandgap, wherein a lattice constant of the second semiconductor matches a lattice constant of the first semiconductor, and wherein the second semiconductor comprises a Group IV semiconductor. The method also includes lifting off the substrate the multi-junction optoelectronic device having the first p-n structure and the second p-n structure, wherein the multi-junction optoelectronic device is a flexible device.