Light-emitting device with wavelenght conversion layer having quantum dots
US11271141B2 · kind B2 · utility
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1References
16Claims
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Key dates
| Filing date | Nov 26, 2018 |
| Grant date | Mar 8, 2022 |
| Priority date | — |
| Expiry date | Mar 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
Abstract
A light-emitting device including a light-emitting semiconductor chip having a semiconductor layer sequence having at least one light-emitting semiconductor layer and a light-outcoupling surface, the light-emitting device further including a wavelength conversion layer arranged on the light-outcoupling surface, the wavelength conversion layer including quantum dots.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.