Bulk acoustic wave resonator
US11271543B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2018 |
| Grant date | Mar 8, 2022 |
| Priority date | — |
| Expiry date | Oct 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/173
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A bulk acoustic wave resonator includes: a substrate; a first electrode disposed above the substrate; a piezoelectric layer disposed above at least a portion of the first electrode; and a second electrode disposed above at least a portion of the piezoelectric layer. A first gap is formed between the piezoelectric layer and one of the first and second electrodes. The first gap includes a first inner gap disposed in an active area of the bulk acoustic wave resonator, and having a first spacing distance between the piezoelectric layer and the one of the first and second electrodes, and a first outer gap disposed outwardly of the active area and having a second spacing distance, different than the first spacing distance, between the piezoelectric layer and the one of the first and second electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.