Fabrication of high density sensor array
US11274950B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2019 |
| Grant date | Mar 15, 2022 |
| Priority date | — |
| Expiry date | Mar 29, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P15/0802
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensor array having a lattice topology includes interconnects having an electrically-conductive layer sandwiched between two dielectric layers, the interconnects defining first-axis interconnects, second-axis interconnects, and interconnect junctions, sensor nodes located on associated interconnect junctions thereby defining an associated first-axis line and second-axis line, a sensor on an associated sensor node, a primary first-axis interconnect interface that is electrically connected to the first-axis interconnects, and a primary second-axis interconnect interface that is electrically connected to the second-axis interconnects. Each sensor node includes a first electrode that is electrically connected to an associated first-axis line, a second electrode that is electrically connected to an associated second-axis line, and a bypass bridge that electrically isolates the associated second-axis line from the associated first-axis line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.