GRIN lens structure in micro-LED devices
US11275202B1 · kind B1 · utility
1Cited by
1References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2017 |
| Grant date | Mar 15, 2022 |
| Priority date | — |
| Expiry date | Oct 27, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2003/0093
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A GaN layer of micro-LEDs is exposed to ion implantation to amorphize one or more regions of the GaN layer. As a result, the GaN layer through which light rays propagate have non-uniform refractive indexes that modify propagation paths of some light rays. Ions are implanted in a region overlapping an active region that emits light to function as a converging GRIN (gradient-index) lens. The ion implanted regions collimate light rays that propagate along predetermined directions. As such, the light extraction from and the focus of the micro-LEDs is increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.