High-precision shadow-mask-deposition system and method therefor
US11275315B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2017 |
| Grant date | Mar 15, 2022 |
| Priority date | — |
| Expiry date | Jul 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/166
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A direct-deposition system forming a high-resolution pattern of material on a substrate is disclosed. Vaporized atoms from an evaporation source pass through a pattern of through-holes in a shadow mask to deposit on the substrate in the desired pattern. The shadow mask is held in a mask chuck that enables the shadow mask and substrate to be separated by a distance that can be less than ten microns. Prior to reaching the shadow mask, vaporized atoms pass through a collimator that operates as a spatial filter that blocks any atoms not travelling along directions that are nearly normal to the substrate surface. Vaporized atoms that pass through the shadow mask exhibit little or no lateral spread after passing through through-holes and the material deposits on the substrate in a pattern that has very high fidelity with the through-hole pattern of the shadow mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.