Integrated circuits and methods for forming thin film crystal layers

US11276644B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Carl Naylor · Portland, US
• Ashish Agrawal · Hillsboro, US
• Kevin Lin · Beaverton, US
• Abhishek A. Sharma · Hillsboro, US
• Mauro J. Kobrinsky · Portland, US
• Christopher J. Jezewski · Portland, US
• Urusa Alaan · Hillsboro, US

Key dates

• Filing date: Dec 17, 2018
• Grant date: Mar 15, 2022
• Expiry date: Jan 15, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28568
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An aspect of the disclosure relates to an integrated circuit. The integrated circuit includes a first electrically conductive structure, a thin film crystal layer located on the first electrically conductive structure, and a second electrically conductive structure including metal e.g. copper. The second electrically conductive structure is located on the thin film crystal layer. The first electrically conductive structure is electrically connected to the second electrically conductive structure through the thin film crystal layer. The thin film crystal layer may be provided as a copper diffusion barrier.