IC product comprising a single active fin FinFET device and an electrically inactive fin stress reduction structure

US11276651B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Anton V. Tokranov · Cohoes, US
• Kai Sun · Beijing, CN
• Elizabeth Strehlow · Malta, US
• James P. Mazza · Saratoga Springs, US
• David Pritchard · Beacon, US
• Heng Yang · Fishkill, US
• Mohamed Rabie · Clifton Park, US

Key dates

• Filing date: May 18, 2020
• Grant date: Mar 15, 2022
• Expiry date: May 18, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/834
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An illustrative device disclosed herein includes a semiconductor substrate and a FinFET transistor device positioned above the semiconductor substrate, wherein the FinFET transistor device has a single active fin structure. The device also includes an electrically inactive dummy fin structure positioned adjacent the single active fin structure, wherein the electrically inactive dummy fin structure is electrically inactive with respect to electrical operation of the FinFET transistor having the single active fin.