Semiconductor device
US11276686B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 23, 2020 |
| Grant date | Mar 15, 2022 |
| Priority date | — |
| Expiry date | Jul 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
There is provided a semiconductor device including: an emitter region of a first conductivity type, a contact region of a second conductivity type, provided on the front surface side of the semiconductor substrate; one or more first trench portions which are electrically connected to a gate electrode and are in contact with emitter regions; a second trench portion which is adjacent to one of the one or more first trench portions, is electrically connected to the gate electrode, is in contact with the contact region of the second conductivity type, and is not in contact with the emitter region; and a dummy trench portion which is adjacent to one of the one or more first trench portions and is electrically connected to an emitter electrode, in which the contact region in contact with the second trench portion is in contact with the emitter electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.