Integrated semiconductor device and electronic apparatus
US11276690B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2018 |
| Grant date | Mar 15, 2022 |
| Priority date | — |
| Expiry date | Nov 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present application provides an integrated semiconductor device and an electronic apparatus, comprising a semiconductor substrate and a first doped epitaxial layer having a first region, a second region, and a third region; a partition structure is arranged in the third region; the first region is formed having at least two second doped deep wells, and the second region is formed having at least two second doped deep wells; a dielectric island partially covers a region between two adjacent doped deep wells in the first region and second region; a gate structure covers the dielectric island; a first doped source region is located on the two sides of the gate structure, and a first doped source region located in the same second doped deep well is separated; a first doped trench is located on the two sides of the dielectric island in the first region, and extends laterally to the first doped source region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.