Multispectral image sensor and manufacturing method thereof
US11276717B2 · kind B2 · utility
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Key dates
| Filing date | Jun 6, 2017 |
| Grant date | Mar 15, 2022 |
| Priority date | — |
| Expiry date | Jun 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
The present disclosure refers to a multispectral image sensor and a manufacturing method thereof. The multispectral image sensor comprises a front-end structure used for photoelectric conversion and processing, and a pixel layer provided on the front-end structure. The pixel layer comprises N pixel units, and N≥4, the pixel units are arranged in a plurality of arrays, a photosensitive wavelength of each pixel unit in each array is different. Whereby, multispectrals can be detected simultaneously, and therefore the efficiency is improved, costs are reduced, and miniaturization is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.