Patent · US Active

Multiferroic heterostructures

US11276728B2 · kind B2 · utility

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2References
21Claims
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Key dates

Filing dateFeb 7, 2020
Grant dateMar 15, 2022
Priority date
Expiry dateFeb 11, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N35/101

Abstract

A heterostructure includes a substrate exhibiting a piezoelectric effect, and a magnetostrictive film supported by the substrate. The magnetostrictive film includes an iron-gallium alloy. The iron-gallium alloy has a gallium composition greater than 20%.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.