Method for forming a device comprising a bipolar transistor
US11276752B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Aug 17, 2020 |
| Grant date | Mar 15, 2022 |
| Priority date | — |
| Expiry date | Aug 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/821
Abstract
A device including a transistor is fabricated by forming a first part of a first region of the transistor through the implantation of dopants through a first opening. The second region of the transistor is then formed in the first opening by epitaxy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.