Semiconductor device, inverter circuit, driving device, vehicle, and elevator
US11276774B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2019 |
| Grant date | Mar 15, 2022 |
| Priority date | — |
| Expiry date | Nov 26, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02T10/70
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An embodiment of a semiconductor device including a silicon carbide layer having a first and a second planes; a first silicon carbide region of first conductivity type in the silicon carbide layer; a second silicon carbide region of second conductivity type in the silicon carbide layer between the first silicon carbide region and the first plane; a third silicon carbide region of the first conductivity type in the silicon carbide layer located between the second silicon carbide region and the first plane; a first electrode located on a side of the first plane; a second electrode located on a side of the second plane; a gate electrode; an aluminum nitride layer containing an aluminum nitride crystal between the second silicon carbide region and the gate electrode; and an insulating layer between the aluminum nitride layer and the gate electrode and having a wider band gap than the aluminum nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.