Method for obtaining an n-type doped metal chalcogenide quantum dot solid-state film, and an optoelectronic device comprising the obtained film
US11276792B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 30, 2020 |
| Grant date | Mar 15, 2022 |
| Priority date | — |
| Expiry date | Aug 4, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Provided are methods for obtaining n-type doped metal chalcogenide quantum dot solid-state films. In some embodiments, the methods include forming an metal chalcogenide quantum dot solid-state film, carrying out a n-doping process on the metal chalcogenide quantum dots of the metal chalcogenide quantum dot solid-state film so that they exhibit intraband absorption, wherein the process includes partially substituting chalcogen atoms by halogen atoms in the metal chalcogenide quantum dots and providing a substance on the plurality of metal chalcogenide quantum dots, to avoid oxygen p-doping of the metal chalcogenide quantum dots. Also provided are optoelectronic devices, which in some embodiments can include an n-type doped metal chalcogenide quantum dot solid-state film (A) obtained by a method as disclosed herein and first (E1) and second (E2) electrodes in physical contact with two respective distanced regions of the film (A).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.