Method of manufacturing light emitting diodes and light emitting diode

US11276800B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Bastian Galler · Regensburg, DE
• Jürgen Off · Regensburg, DE

Key dates

• Filing date: Mar 13, 2018
• Grant date: Mar 15, 2022
• Expiry date: Mar 13, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/816
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A method for manufacturing light emitting diodes and a light emitting diode are disclosed. In an embodiment a method includes growing an n-conductive n-layer, growing an active zone for generating ultraviolet radiation, growing a p-conductive p-layer, producing a p-type semiconductor contact layer having a varying thickness and having a plurality of thickness maxima directly on the p-type layer and applying an ohmic-conductive electrode layer directly on the semiconductor contact layer, wherein each the n-layer and the active zone is based on AlGaN, the p-layer is based on AlGaN or InGaN and the semiconductor contact layer is a GaN layer, wherein the thickness maxima have an area concentration of at least 104 cm−2 in a top view, and wherein the p-layer is only partially covered by the semiconductor contact layer in the top view.