Symmetric Doherty amplifier with in-package combining node
US11277099B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2020 |
| Grant date | Mar 15, 2022 |
| Priority date | — |
| Expiry date | Jun 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An RF power amplifier includes an amplifier device and a shunt-inductance circuit. The amplifier device includes a substrate, a combining node lead, first and second amplifier dies coupled to the substrate, and first and second output circuits. The first and second amplifier dies are configured to amplify first and second input RF signals, respectively, to produce first and second output RF signals at first and second output terminals, respectively. The first output circuit includes a first inductive path connecting the first output terminal to the lead. The second output circuit includes a second inductive path connecting the second output terminal to the lead. The lead is configured to combine the first and second output RF signals to produce a third output RF signal. The shunt-inductance circuit is coupled between the first output terminal and a ground reference.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.