Patent · US Active

Composite nitride-based film structure and method for manufacturing same

US11280027B2 · kind B2 · utility

0Cited by
6References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 21, 2018
Grant dateMar 22, 2022
Priority date
Expiry dateApr 2, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/02631
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A composite nitride-based film structure includes a bulk single crystal, a plurality of nitride microcrystals, and an amorphous nitride thin film. The plurality of nitride microcrystals is provided on the bulk single crystal, and has a specific orientation relationship with a crystal structure of the bulk single crystal. The nitride thin film is provided on the bulk single crystal, surrounds the nitride microcrystal, and covers a surface of the bulk single crystal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.