Patent · US Active

Photonics systems to enable top-side wafer-level optical and electrical test

US11280959B2 · kind B2 · utility

2Cited by
3References
30Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 23, 2020
Grant dateMar 22, 2022
Priority date
Expiry dateApr 23, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L22/34
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An intact semiconductor wafer (wafer) includes a plurality of die. Each die has a top layer including routings of conductive interconnect structures electrically isolated from each other by intervening dielectric material. A top surface of the top layer corresponds to a top surface of the wafer. Below the top layer, each die has a device layer including optical devices and electronic devices. Each die has a cladding layer below the device layer and on a substrate of the wafer. Each die includes a photonic test port within the device layer. For each die, a light transfer region is formed within the intact wafer to extend through the top layer to the photonic test port within the device layer. The light transfer region provides a window for transmission of light into and out of the photonic test port from and to a location on the top surface of the wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.