Semiconductor device and power conversion device
US11282937B2 · kind B2 · utility
2Cited by
0References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2019 |
| Grant date | Mar 22, 2022 |
| Priority date | — |
| Expiry date | Apr 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
The invention provides an inexpensive flywheel diode having a low power loss. A semiconductor substrate side of a gate electrode provided on a surface of an anode electrode side of a semiconductor substrate including silicon is surrounded by a p layer, an n layer, and a p layer via a gate insulating film. The anode electrode is in contact with the p layer with a low resistance, and is also in contact with the n layer or the p layer, and a Schottky diode is formed between the anode electrode and the n layer or the p layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.