Low temperature thin film transistors and micro lightemitting diode displays having low temperature thin film transistors
US11282963B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 30, 2018 |
| Grant date | Mar 22, 2022 |
| Priority date | — |
| Expiry date | Jul 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Low temperature thin film transistors and micro light-emitting diode displays having low temperature thin film transistors are described. In an example, an integrated circuit structure includes a gate electrode on an insulator structure. A channel material layer is over the gate electrode and extends beyond a first side and a second side of the gate electrode. The channel material layer includes a crystalline Group III-P material. A first conductive contact is on a portion of the channel material layer extending beyond the first side of the gate electrode. A second conductive contact is on a portion of the channel material layer extending beyond the second side of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.