Semiconductor device comprising halopalladate
US11282973B2 · kind B2 · utility
0Cited by
1References
12Claims
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Assignee
Inventors
Key dates
| Filing date | Apr 20, 2018 |
| Grant date | Mar 22, 2022 |
| Priority date | — |
| Expiry date | Apr 20, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a halometallate compound comprising: (a) cesium; (b) palladium; and (c) one or more halide anions [X]. The invention also relates to a layer comprising the semiconducting material. The invention further relates to a process for producing a halometallate compound of formula (IV): [A]2[MIV][X]6, which process uses a H[X] and a compound comprising a sulfoxide group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.