Photosensitive element and manufacturing method thereof, display panel and manufacturing method thereof
US11282974B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Oct 24, 2018 |
| Grant date | Mar 22, 2022 |
| Priority date | — |
| Expiry date | Feb 3, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photosensitive element includes a first film layer, a second film layer and a third film layer. The first film layer, the second film layer and the third film layer are in a sequentially stacked structure, the first film layer is a p-type copper indium gallium selenide (CIGS) layer, the second film layer is an i-type CIGS layer, and the third film layer is an n-type film layer, and the first film layer, the second film layer and the third film layer form a PIN junction structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.