Patent · US Active

Crystallisation of amorphous silicon from a silicon-rich aluminium substrate

US11282978B2 · kind B2 · utility

0Cited by

1References

5Claims

0Family size

Assignees

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE · FR
UNIVERSITE DE STRASBOURG · FR

Inventors

Abdelilah Slaoui · Truchtersheim, FR
Pierre Bellanger · Strasbourg, FR
Alexander Ulyashin · Hagen, DE
Freddy Syvertsen · Oslo, NO

Key dates

Filing date	Apr 21, 2017
Grant date	Mar 22, 2022
Priority date	—
Expiry date	Apr 21, 2037

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

The invention relates to a method for manufacturing a semiconductor component comprising a thin layer of crystalline silicon on a substrate, comprising the steps of:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.