Pillar confined backside emitting VCSEL
US11283240B2 · kind B2 · utility
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13References
14Claims
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Key dates
| Filing date | Dec 4, 2018 |
| Grant date | Mar 22, 2022 |
| Priority date | — |
| Expiry date | Dec 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A backside Vertical Cavity Surface Emitting Laser (VCSEL) has a substrate. A first mirror device is formed on the substrate. An active region is formed on the first mirror device. A second mirror device is formed on the active region. A pillar is formed by directional Inductive Coupled Plasma-Reactive Ion Etcher (ICP-RIE). The pillar exposes a portion of the first mirror device, the active region and the second mirror device. A first metal contact is formed over a top section of the pillar. A second metal contact is formed on the substrate. An opening formed in the second metal contact and aligned with the pillar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.