Method of forming a crystalline thin film having the formula MY2 using an ALD-formed amorphous thin film having the formula MYx as a precursor
US11286557B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 12, 2019 |
| Grant date | Mar 29, 2022 |
| Priority date | — |
| Expiry date | Feb 12, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4408
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of preparing a crystalline thin film having a formula MY2 includes (1) preparing an MYx amorphous film by atomic layer deposition on a surface of a substrate, and (2) annealing the amorphous MYx film at 350° C. or more to provide the crystalline MY2 film. The amorphous MYx film is formed from at least one metal M precursor and at least one element Y precursor, wherein x is 1.5 to 3.1, M is tungsten or molybdenum, and Y is sulfur or selenium. Step (1) includes a) introducing a first metal M precursor or element Y precursor into a deposition chamber, b) purging with inert gas, c) introducing a second metal M precursor when the first precursor is element Y, or element Y precursor when the first precursor is metal M, d) purging with inert gas, e) repeating steps a) to d), and f) obtaining the amorphous MYx film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.