Radiation detector using a graphene amplifier layer
US11287536B1 · kind B1 · utility
3Cited by
1References
15Claims
0Family size
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Key dates
| Filing date | Oct 17, 2018 |
| Grant date | Mar 29, 2022 |
| Priority date | — |
| Expiry date | Dec 13, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2823
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A radiation field is detected or imaged using one or more junction devices in which a two-dimensional conductor layer is capacitively coupled to a semiconductor absorber layer. In the junction devices, pixel-level amplification and read-out are accomplished through the photogating of the devices by absorption within the absorber layer while it is in a state of deep depletion. When the two-dimensional conductor is graphene, we refer to a device operating in that manner as a deeply depleted graphene-oxide-semiconductor (D2GOS) detector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.