Semiconductor-on-insulator (SOI) substrate and method for forming
US11289330B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2020 |
| Grant date | Mar 29, 2022 |
| Priority date | — |
| Expiry date | Jul 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0323
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various embodiments of the present application are directed towards a method for forming a semiconductor-on-insulator (SOI) substrate with a thick device layer and a thick insulator layer. In some embodiments, the method includes forming an insulator layer covering a handle substrate, and epitaxially forming a device layer on a sacrificial substrate. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates, and the sacrificial substrate is removed. The removal includes performing an etch into the sacrificial substrate until the device layer is reached. Because the device layer is formed by epitaxy and transferred to the handle substrate, the device layer may be formed with a large thickness. Further, because the epitaxy is not affected by the thickness of the insulator layer, the insulator layer may be formed with a large thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.