Epitaxial wafer including boron and germanium and method of fabricating the same
US11289334B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2019 |
| Grant date | Mar 29, 2022 |
| Priority date | — |
| Expiry date | Dec 30, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/026
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An epitaxial wafer and a method of fabricating an epitaxial wafer, the method including providing a semiconductor substrate doped with both boron and germanium such that a sum of boron concentration and germanium concentration is at least 8.5E+18 atoms/cm3 and the germanium concentration is 6 times or less the boron concentration; forming an epitaxial layer on the semiconductor substrate such that the semiconductor substrate and the epitaxial layer constitute the epitaxial wafer; and annealing the epitaxial wafer for 1 hour or longer at a temperature of 1,000° C. or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.