Semiconductor device and method of manufacturing the same
US11289363B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 12, 2020 |
| Grant date | Mar 29, 2022 |
| Priority date | — |
| Expiry date | May 12, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes: providing a substrate, forming a first opening, forming a first insulating layer, forming a second opening, embedding a conductive layer, forming a protective layer, and performing CMP. The substrate includes a semiconductor substrate and a semiconducting layer. The conductive layer is embedded in the second opening so that a gap along a thickness direction of the semiconducting layer is formed. The protective layer is formed in the second opening on at least a portion of a surfaces of the conductive layer. In the CMP step, a portion of the conductive layers formed outside the second opening is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.