Ultra-thin diffusion barrier
US11289423B2 · kind B2 · utility
1Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2019 |
| Grant date | Mar 29, 2022 |
| Priority date | — |
| Expiry date | Jun 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal interconnect arrangement in an integrated circuit, includes a damascene trench which includes a dielectric base, with a trench made therein, one or more two dimensional diffusion barrier layers formed over the trench, a conductor layer formed atop the diffusion layer, wherein the one or more two-dimensional diffusion barrier layers substantially prevent diffusion of constituents of the conductor layer into the dielectric base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.