Spacer structure for semiconductor device

US11289586B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventor

• Yi-Chen Lo · Zhubei City, TW

Key dates

• Filing date: Aug 11, 2020
• Grant date: Mar 29, 2022
• Expiry date: Aug 11, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6219

Abstract

The present disclosure describes a semiconductor structure and a method for forming the same. The semiconductor structure can include a substrate, a fin structure over the substrate, a gate structure over the fin structure, a first inner spacer layer formed in the fin structure and adjacent to the gate structure, and a second inner spacer layer extending through the first inner spacer layer.