Radiation tolerant temperature compensated delayed undervoltage lockout and overvoltage shutdown
US11289897B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2021 |
| Grant date | Mar 29, 2022 |
| Priority date | — |
| Expiry date | Aug 30, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02H3/207
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A circuit includes a voltage detection path having a first transistor and a second transistor coupled to the first voltage detection path by a first terminal of the second transistor. The first voltage detection path includes: a first current source and a first voltage divider unit coupled to the first current source. The first transistor is coupled to the first voltage divider unit by a first terminal of the first transistor. A first voltage value at a second terminal of the first transistor is configured to switch between a first high voltage value and a first low voltage value at least partially based on a first detection voltage value provided at the first terminal of the first transistor by the first voltage divider unit. A second voltage at a second terminal of the second transistor is configured to switch between a second high voltage value and a second low voltage value at least partially based on the first voltage value at the second terminal of the first transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.