Protection of a field-effect transistor, which is operated in a switching mode, against an overload current
US11290102B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2018 |
| Grant date | Mar 29, 2022 |
| Priority date | — |
| Expiry date | Jan 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/145
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In a method for protecting a field-effect transistor, which is operated in a switching mode, against an overload current in a switched-on switching state, an electric drain-source voltage between a drain connection and a source connection of the field-effect transistor is detected. The drain-source voltage is compared with a predefined voltage comparison value, and the field-effect transistor is switched into a switched-off switching state in the event that the drain-source voltage is greater than the voltage comparison value. For the purpose of providing a temperature compensation of the protection, the temperature of the field-effect transistor is detected; and the voltage comparison value is adjusted depending on the temperature. The voltage comparison value is, in addition, also dependent on time during the switched-on switching state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.