High power RF switch with controlled well voltage for improved linearity
US11290105B1 · kind B1 · utility
2Cited by
8References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2020 |
| Grant date | Mar 29, 2022 |
| Priority date | — |
| Expiry date | Dec 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0054
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
RF transistors manufactured using a bulk CMOS process exhibit non-linear drain-body and source-body capacitances which degrade the linearity performance of the RF circuits implementing such transistors. The disclosed methods and devices address this issue and provide solutions based on implementing two or more bias voltages in accordance with the states of the transistors. Various exemplary RF circuits benefiting from the described methods and devices are also presented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.