High-voltage output driver for a sensor device with reverse current blocking
US11290107B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2018 |
| Grant date | Mar 29, 2022 |
| Priority date | — |
| Expiry date | Dec 1, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/018507
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high-voltage output driver (1) for a sensor device (100) with reverse current blocking comprises a supply node (SN) to apply a supply voltage (VHV) and an output node (OP) to provide an output signal (OS) of the high-voltage output driver (1). The high-voltage output driver (1) comprises a driver transistor (MP0) being disposed between the supply node (SN) and the output node (OP). The high-voltage output driver (1) further comprises a bulk control circuit (20) to apply a bulk control voltage (Vwell) to a bulk node (BMP0) of the driver transistor (MP0), and a gate control circuit (30) to apply a gate control voltage (GCV) to the gate node (GMP0) of the driver transistor (MP0).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.