Method based on multi-source deposition for fabricating perovskite film
US11293101B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2019 |
| Grant date | Apr 5, 2022 |
| Priority date | — |
| Expiry date | Mar 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/811
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for fabricating a perovskite film includes the steps of: placing a substrate on a substrate stage in a chamber, the substrate stage configured to rotate around its central axis at a rotation speed; depositing first source materials on the substrate from a first set of evaporation units, each coupled to the side section or the bottom section of the chamber; depositing second source materials on the substrate from a second set of evaporation units coupled to the bottom section, wherein the chamber includes a shield defining two or more zones having respective horizontal cross-sectional areas, which are open and facing the substrate, designated for the two or more evaporation units in the second set. The perovskite film includes multiple unit layers each being formed by one rotation of the substrate stage, and having composition and thickness thereof controlled by adjusting evaporation rates, rotation speed and horizontal cross-sectional areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.