Method for producing a SiC epitaxial wafer containing a total density of large pit defects and triangular defects of 0.01 defects/cm2 or more and 0.6 defects/cm2 or less
US11293115B2 · kind B2 · utility
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Key dates
| Filing date | Aug 21, 2017 |
| Grant date | Apr 5, 2022 |
| Priority date | — |
| Expiry date | Aug 25, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H-SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 2.5 inclusions/cm2, wherein a total density of large pit defects and triangular defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.6 defects/cm2 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.