Temperature compensation for silicon resistor using interconnect metal
US11294408B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2020 |
| Grant date | Apr 5, 2022 |
| Priority date | — |
| Expiry date | Aug 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C17/006
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An integrated circuit that can include a driver having a first driver output, and a first resistance coupled between a first node coupled to the first driver output and a second node. The first resistance can include a process resistor including a first material having a first temperature coefficient, and an interconnect resistor configured to provide at least 20% of the first resistance and including a second material having a second temperature coefficient which changes resistance in an opposite direction with temperature as compared to the first temperature coefficient. A first terminal of the interconnect resistor is directly connected to a first terminal of the process resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.