Semiconductor device and method of manufacturing the same
US11296045B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2020 |
| Grant date | Apr 5, 2022 |
| Priority date | — |
| Expiry date | May 7, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/80986
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided and includes first and second semiconductor chips bonded together. The first chip includes a first substrate, a first insulating layer disposed on the first substrate and having a top surface, a first metal pad embedded in the first insulating layer and having a top surface substantially planar with the top surface of the first insulating layer, and a first barrier disposed between the first insulating layer and the first metal pad. The second chip includes a second substrate, a second insulating layer, a second metal pad, and a second barrier with a similar configuration to the first chip. The top surfaces of the first and second insulating layers are bonded to provide a bonding interface, the first and second metal pads are connected, and a portion of the first insulating layer is in contact with a side region of the first metal pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.